Effect of Mn Doping on Electrical and Optical Behavior of Chemically Synthesized ZnTe Thin Film

In this work, the structural, optical, and electrical properties of pure ZnTe and Mn-doped ZnTe thin films were examined to understand the effect of manganese (Mn) incorporation on the fundamental behavior of the material. ZnTe, a II–VI compound semiconductor, has gained significant attention due to its direct band gap, high optical absorption coefficient, and suitability for various optoelectronic applications. Introducing transition metal dopants such as Mn into the ZnTe lattice is a well-established strategy to modify and improve its optical properties, thereby enhancing its functional performance. The ZnTe and Mn-doped ZnTe thin films were deposited on FTO using the chemical bath deposition (CBD) technique. This method was chosen because of its simplicity, cost-effectiveness, and ability to produce uniform, well-adhered films over large areas. Structural characterization was carried out using X-ray diffraction (XRD) to investigate phase purity, crystallinity, preferred orientation, and possible lattice distortions resulting from Mn doping. Optical studies were performed using UV–Visible spectroscopy to analyze absorption characteristics and estimate the optical band gap, which provides insight into changes in the electronic structure due to Mn incorporation. Electrical behavior was evaluated using current–voltage (I–V) measurements to understand charge transport mechanisms, variations in conductivity, and the role of Mn in carrier movement. Overall, the combined structural, optical, and electrical investigations provide a clear picture of the influence of Mn doping on ZnTe thin films, demonstrating their promising potential for optoelectronic devices such as photodetectors and photovoltaic applications.